229910021332 silicide Inorganic materials 0.000 claims description 3.239000004065 semiconductor Substances 0.000 claims abstract description 9.239000000758 substrate Substances 0.000 claims abstract description 58.Assignors: YOSHIDA, MASAYUKI Application granted granted Critical Publication of US5031008A publication Critical patent/US5031008A/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links
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Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to JP1056331A priority Critical patent/JPH0734475B2/en Priority to JP1-56331 priority Application filed by Toshiba Corp filed Critical Toshiba Corp Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST. Original Assignee Toshiba Corp Priority date (The priority date is an assumption and is not a legal conclusion.
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Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US07/491,470 Inventor Masayuki Yoshida Current Assignee (The listed assignees may be inaccurate.
#Mosfet transistor pdf
Google Patents US5031008A - MOSFET transistorÄownload PDF Info Publication number US5031008A US5031008A US07/491,470 US49147090A US5031008A US 5031008 A US5031008 A US 5031008A US 49147090 A US49147090 A US 49147090A US 5031008 A US5031008 A US 5031008A Authority US United States Prior art keywords substrate regions source gate channel region Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.